A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystalsTALANIN, V. I; TALANIN, I. E.Journal of crystal growth. 2012, Vol 346, Num 1, pp 45-49, issn 0022-0248, 5 p.Article

Three-dimensional simulation of microstructure evolution for three-phase nano-composite ceramic tool materialsSONG HAO; CHUANZHEN HUANG; BIN ZOU et al.Computational materials science. 2012, Vol 65, pp 254-263, issn 0927-0256, 10 p.Article

Structure of defects, their interactions and positron characteristics in Fe₃Al systemKURIPLACH, Jan.Physica. B, Condensed matter. 2012, Vol 407, Num 14S, pp 69-74, issn 0921-4526, 6 p.Conference Paper

Determination of the activation energy by stochastic analyses of molecular dynamics simulations of dislocation processesMONNET, Ghiath.Philosophical magazine (2003. Print). 2011, Vol 91, Num 28-30, pp 3810-3829, issn 1478-6435, 20 p.Article

Implications of the choice of interatomic potential on calculated planar faults and surface properties in nickelBECKER, C. A; TAVAZZA, F; LEVINE, L. E et al.Philosophical magazine (2003. Print). 2011, Vol 91, Num 25-27, pp 3578-3597, issn 1478-6435, 20 p.Article

Molecular dynamics simulation of the structural evolution of misfit dislocation networks at γ/γ' phase interfaces in Ni-based superalloysWU, Wen-Ping; GUO, Ya-Fang; WANG, Yue-Sheng et al.Philosophical magazine (2003. Print). 2011, Vol 91, Num 1-3, pp 357-372, issn 1478-6435, 16 p.Article

Native defects and Pr impurities in orthorhombic CaTiO₃ by first-principles calculationsAILING ZHU; JIANCHUAN WANG; DONGDONG ZHAO et al.Physica. B, Condensed matter. 2011, Vol 406, Num 13, pp 2697-2702, issn 0921-4526, 6 p.Article

The problem of a moving subsonic edge dislocation near an interface solved with only discrete image dislocationsWEERTMAN, Johannes.Philosophical magazine (2003. Print). 2011, Vol 91, Num 1-3, pp 373-388, issn 1478-6435, 16 p.Article

Threshold displacement energies and defect formation energies in Y₂Ti₂O₇XIAO, H. Y; GAO, F; WEBER, W. J et al.Journal of physics. Condensed matter (Print). 2010, Vol 22, Num 41, issn 0953-8984, 415801.1-415801.9Article

An Interesting Correlation between Crystalline Perfection and Second Harmonic Generation Efficiency on KCl-and Oxalic Acid-Doped ADP CrystalsBHAGAVANNARAYANA, G; PARTHIBAN, S; MEENAKSHISUNDARAM, Subbiah et al.Crystal growth & design. 2008, Vol 8, Num 2, pp 446-451, issn 1528-7483, 6 p.Article

Analytical algorithm for Equivalent Crystal TheoryZYPMAN, Fredy R; FERRANTE, John.Computational materials science. 2008, Vol 42, Num 4, pp 659-663, issn 0927-0256, 5 p.Article

The core effect of misfit dislocations in heteroepitaxyKATSUNO, Hiroyasu; UWAHA, Makio; SAITO, Yukio et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1380-1384, issn 0022-0248, 5 p.Article

A thin two-phase foils deformed by an interfacial dislocation in anisotropic elasticity = Lámina delgada bifásica deformada por dislocación interfacial en elasticidad elásticaMADANI, Salah; BRIOUA, Mourad; OUTTAS, Toufik et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2005, Vol 44, Num 2, pp 127-129, issn 0366-3175, 3 p.Article

Importance of quantum tunneling in vacancy-hydrogen complexes in diamondSHAW, M. J; BRIDDON, P. R; GOSS, J. P et al.Physical review letters. 2005, Vol 95, Num 10, pp 105502.1-105502.4, issn 0031-9007Article

Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayersVETTER, W. M; TSUCHIDA, H; KAMATA, I et al.Journal of applied crystallography. 2005, Vol 38, pp 442-447, issn 0021-8898, 6 p., 3Article

Scalar-product cluster variation method layer formulation for the irregular tetrahedron cluster in bcc latticesSCHÖN, Claudio Geraldo; KIKUCHI, Rvoichi.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 9, pp 094101.1-094101.10, issn 1098-0121Article

Mechanism of sp³ bond formation in the growth of diamond-like carbonROBERTSON, John.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 942-948, issn 0925-9635, 7 p.Conference Paper

Vacancy formation energy of small particlesQI, W. H; WANG, M. P.Journal of materials science. 2004, Vol 39, Num 7, pp 2529-2530, issn 0022-2461, 2 p.Article

A comparative study of the structure and energetics of elementary defects in 3C- and 4H-SiCPOSSELT, M; GAO, F; WEBER, W. J et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 8, pp 1307-1323, issn 0953-8984, 17 p.Article

Singular field decomposition based on path-independent integralsSOARE, M. A; PICU, R. C.Philosophical magazine (2003. Print). 2004, Vol 84, Num 28, pp 2979-3000, issn 1478-6435, 22 p.Article

The structure of the cubic coincident site lattice rotation groupREED, Bryan W; MINICH, Roger W; RUDD, Robert E et al.Acta crystallographica. Section A, Foundations of crystallography. 2004, Vol 60, pp 263-277, issn 0108-7673, 15 p., 3Article

Yield stress of nanocrystalline materials: role of grain-boundary dislocations, triple junctions and Coble creepGUTKIN, M. Yu; OVID'KO, I. A; PANDE, C. S et al.Philosophical magazine (2003. Print). 2004, Vol 84, Num 9, pp 847-863, issn 1478-6435, 17 p.Article

Ab-initio simulation of (a/2)110] screw dislocations in γ-TiAlWOODWARD, C; RAO, S. I.Philosophical magazine (2003. Print). 2004, Vol 84, Num 3-5, pp 401-413, issn 1478-6435, 13 p.Conference Paper

The enumeration and transformation of dislocation dipoles. I. The dipole strengths of closed and open dislocation arraysNABARRO, F. R. N; BROWN, L. M.Philosophical magazine (2003. Print). 2004, Vol 84, Num 3-5, pp 429-439, issn 1478-6435, 11 p.Conference Paper

Theoretical study on generation and atomic structures of stacking-fault tetrahedra in Si film growthKOBAYASHI, Ryo; NAKAYAMA, Takashi.Thin solid films. 2004, Vol 464-65, pp 90-94, issn 0040-6090, 5 p.Conference Paper